Direct extraction method of SOI MOSFET transistor's parameters
(1996) 7th International Symposium on SOI Technology and Devices — Location: Los Angeles, USA (5.May.1996)
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- Abstract
- An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (RG, RD and R S) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit.
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Citations
Raskin, J.-P., Gillon, R., Vanhoenacker-Janvier, D., & Colinge, J.-P. (1996). Direct extraction method of SOI MOSFET transistor’s parameters. Proceedings of the 7th International Symposium on SOI Technology and Devices, pp. 225-230. https://hdl.handle.net/2078.5/229200