Orientational dependence of charge transport in disordered silicon nanowires
(2008) Nano Letters : a journal dedicated to nanoscience and nanotechnology — Vol. 8, n° 12, p. 4146-4150 (5 pages) (2008)
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- Abstract
- We report on a theoretical study of surface roughness effects on charge transport in silicon nanowires with three different crystalline orientations, [100], [110] and [111]. Using an atomistic tight-binding model, key transport features such as mean-free paths, charge mobilities, and conductance scaling are investigated with the complementary Kubo-Greenwood and Landauer-Büttiker approaches. The anisotropy of the band structure of bulk silicon results in a strong orientation dependence of the transport properties of the nanowires. The best orientations for electron and hole transport are found to be the [110] and [111] directions, respectively. © 2008 American Chemical Society.
- Affiliations
UMR Laboratoire des Technologies de la Microélectronique
Citations
Persson, M. P., Lherbier, A., Niquet, Y.-M., Triozon, F., & Roche, S. (2008). Orientational dependence of charge transport in disordered silicon nanowires. Nano Letters : a journal dedicated to nanoscience and nanotechnology, 8(12), 4146-4150 (5 pages). https://doi.org/10.1021/nl801128f (Original work published 2008)