Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal study
(2010) European Solid-State Device Research Conference (ESSDERC 2010) — Location: Séville (Espagne) (14.September.2010)
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Afzalian, A., & Flandre, D. (2010). Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal study. Proceedings of the European Solid-State Device Research Conference (ESSDERC 2010), p. 376-379. https://doi.org/10.1109/ESSDERC.2010.5618206