Microwave propagation in p-i-n transmission lines
(1997) IEEE Microwave and Guided Wave Letters — Vol. 7, n° 6, p. 159-161 (1997)
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- Abstract
- In this paper the layered structure of p-i-n photodetectors is modeled for the first time as a transmission line. The method of lines, as a two-dimensional (2-D) full-wave approach, is used to calculate the propagation constant. The numerical results agree well with measurements made on experimental devices over a frequency range of 1-30 GHz. An important new result is that the analysis of the current distribution in the bottom shielding layer shows that the finite conductivity of the high-doped semiconductor material in the layer results in a significant edge effect. This effect is properly taken into account in our 2-D model.
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Citations
Zhu, Z., & Vander Vorst, A. (1997). Microwave propagation in p-i-n transmission lines. IEEE Microwave and Guided Wave Letters, 7(6), 159-161. https://doi.org/10.1109/75.585202 (Original work published 1997)