Optical crosstalk reduction using a HR-Si substrate with trap-rich passivation layer
(2007) EuMC 2007. 37th European Microwave Conference — Location: Munich, Germany (9.October.2007)
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- Abstract
- The efficiency of a coplanar waveguide photo- induced Radio Frequency switch on a High Resistivity Silicon substrate is presented. Experimental results from 40 MHz to 40 GHz demonstrate the important reduction of transmission line losses and optical crosstalk obtained by introducing a trap-rich passivation layer (crystallized amorphous silicon) at the interface between the high resistivity silicon substrate and the field oxide.
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Roda Neve, C., Lederer, D., & Raskin, J.-P. (2007). Optical crosstalk reduction using a HR-Si substrate with trap-rich passivation layer. EuMC 2007 Proceedings. 37th European Microwave Conference, p. 592-595. https://hdl.handle.net/2078.5/230907