FD SOI technologies from digital to RF and beyond
(2018) IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference – S3S’18 — Location: San Francisco, USA (15.October.2018)
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- Abstract
- Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication and computing systems will require transistors with better high frequency and high speed performance at lower power consumption. Fully Depleted (FD) SOI technology is foreseen as one of the best candidates and has been intensively studied these last years. Most of the reported data concern its digital performance. In this paper, the analog/RF behavior, self-heating characteristics, non-linear behavior as well as the wideband electrical performance at cryogenic temperature of FD SOI devices are presented.
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Citations
Raskin, J.-P. (2018). FD SOI technologies from digital to RF and beyond. Proceedings of the IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, p. paper 7.1. https://doi.org/10.1109/S3S.2018.8640138