Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

Dehdashti Akhavan, Nima;Afzalian, Aryan;Lee, Chi-Woo;Yan, Ran;Colinge, Jean-Pierre;et.al.
(2010) IEEE Transactions on Electron Devices — Vol. 57, n° 5, p. 1102-1109 (2010)

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Authors
  • Dehdashti Akhavan, NimaTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).
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Dehdashti Akhavan, N., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Fagas, G., & Colinge, J.-P. (2010). Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs. IEEE Transactions on Electron Devices, 57(5), 1102-1109. https://doi.org/10.1109/TED.2010.2044295 (Original work published 2010)