Critical behavior of nuclear-spin diffusion in GaAs/AlGaAs heterostructures near Landau level filling nu = 1.
(1997) Physical Review Letters — Vol. 79, n° 9, p. 1718-1721 (1997)
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- Abstract
- Thermal measurements on a GaAs/AlGaAs heterostructure reveal that the state of the confined two-dimensional electrons profoundly affects the nuclear-spin diffusion near Landau level filling factor v = 1. The experiments provide quantitative evidence that a dramatic enhancement of nuclear-spin diffusion from the GaAs quantum wells into the AlGaAs barriers is responsible for the recently reported sharp peak in the temperature dependence of heat capacity near v = 1. We discuss the physical origin of this behavior in terms of the possible Skyrme solid-liquid phase transition.
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Bayot, V., Grivei, E., Beuken, J.-M., Melinte, S., & Shayegan, M. (1997). Critical behavior of nuclear-spin diffusion in GaAs/AlGaAs heterostructures near Landau level filling nu = 1. Physical Review Letters, 79(9), 1718-1721. https://doi.org/10.1103/PhysRevLett.79.1718 (Original work published 1997)