Charge carrier injection and trapping in the buried oxides of SOI structures
(2000) NATO Advanced Research Workshop on “Perspectives, Science and Technologies for Novel Silicon on Insulator Devices” — Location: Kiev (Ukraine) (15.October.2000)
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- Abstract
- The electron injection processes in the silicon-on-insulator (SOI) devices affect strongly the reliability of device operation [1]. Usually the buried oxide (BOX)/silicon film interface shows worse structural and electrical properties than that of the gate oxide/silicon film interface [2]. This leads to enhanced charge trapping and degradation of the BOX during SOI device operation. Therefore, the promising perspectives of SOI devices for some applications (especially for high-voltage and high-temperature devices) are often limited by carrier injection processes in the BOX.
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Citations
Nazarov, A., Kilchytska, V., & Barchuk, I. P. (2000). Charge carrier injection and trapping in the buried oxides of SOI structures. Proceedings of the NATO Advanced Research Workshop on “Perspectives, Science and Technologies for Novel Silicon on Insulator Devices”. Published. NATO Advanced Research Workshop on “Perspectives, Science and Technologies for Novel Silicon on Insulator Devices”, Kiev (Ukraine). https://hdl.handle.net/2078.5/253200