Silicon-on-insulator for high-temperature applications
(2008) IET Circuits, Devices and Systems — Vol. 2, n° 1, p. 151-157 (2008)
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- Abstract
- The silicon-on-insulator (SOI) CMOS technology is one of the best candidates for high-temperature applications due to its low leakage current, steep subthreshold slope, absence of latch-up phenomenon and temperature-resistant threshold voltage. However, the most critical elements for high temperature applications are transmission lines, especially thin-film microstrip lines. In the paper, the impact of high-temperature operation on the RF performance of some SOI circuits is analysed up to 250 degrees C.
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Vanhoenacker-Janvier, D., El Kaamouchi, M., & Si Moussa, M. (2008). Silicon-on-insulator for high-temperature applications. IET Circuits, Devices and Systems, 2(1), 151-157. https://doi.org/10.1049/iet-eds:20070117 (Original work published 2008)