Graded Channel concept used to improve RF noise of an industrial 0.15 µm SOI CMOS technology

Emam, Mostafa;Sakalas, P.;Kumar, A.;Ida, J.;Danneville, François;et.al.
(2010) The 5th European Microwave Integrated Circuits Conference - EuMIC’10 — Location: Paris, France (27.September.2010)

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  • Emam, MostafaUCLouvain
    Author
  • Sakalas, P.UCLouvain
    Author
  • Kumar, A.UCLouvain
    Author
  • Ida, J.UCLouvain
    Author
  • Vanhoenacker-Janvier, DanielleUCLouvain
    Author
  • Author
  • Danneville, FrançoisUCLouvain
    Author
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Emam, M., Sakalas, P., Kumar, A., Ida, J., Vanhoenacker-Janvier, D., Raskin, J.-P., & Danneville, F. (2010). Graded Channel concept used to improve RF noise of an industrial 0.15 µm SOI CMOS technology. Proceedings of the 5th European Microwave Integrated Circuits Conference - EuMIC’10. Published. The 5th European Microwave Integrated Circuits Conference - EuMIC’10, Paris, France. https://hdl.handle.net/2078.5/231141