Thin film transfer for the fabrication of multiple gate MOS transistors

Raskin, Jean-Pierre
(2006) 9th International Symposium on Semiconductor Wafer Bonding, Science, Technology and Application - Electrochemical Society Fall Meeting — Location: Cancum, Mexico (29.October.2006)

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Abstract
A new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pre-etched cavities is presented. In this context, wafer bonding parameters are analyzed. The effects of surface activation and annealing conditions are qualified, quantified and a viable solution is proposed.
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Raskin, J.-P. (2006). Thin film transfer for the fabrication of multiple gate MOS transistors. Proceeding of the 9th International Symposium on Semiconductor Wafer Bonding, Science, Technology and Application - Electrochemical Society Fall Meeting, p. Paper 1369. https://hdl.handle.net/2078.5/229162