Synthetic microwave inductors in SOI technology
(1997) 1997 IEEE International SOI Conference — Location: Fish Camp, California, USA (6.October.1997)
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- Abstract
- One of the most promising approaches in the field of active filtering has been the replacement of conventional passive resonators with active resonators that are based on high frequency inductance-simulating-circuits. For the first time the possibilities to realize synthetic inductors in SOI MOSFET technology is demonstrated. Compared to the conventional spiral inductors the active inductors have attractive features; lossless characteristic, operation over a wide microwave range, size independent of the inductance value, and easy construction in MMICs. All these advantages are important in the GHz frequency range where many of the wireless communication applications operate.
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Raskin, J.-P., Eggermont, J.-P., Vanhoenacker-Janvier, D., & Colinge, J.-P. (1997). Synthetic microwave inductors in SOI technology. Proceedings of the 1997 IEEE International SOI Conference, pp. 90-91. https://doi.org/10.1109/SOI.1997.634947