High temperature antenna switches in 130 nm SOI technology
(2007) 2007 IEEE International SOI Conference — Location: Indian Wells, CA, USA (1.October.2007)
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- Abstract
- This paper presents the design and the behavior vs. temperature of RF antenna switches in a 130 nm SOI technology. The design is implemented using two types of transistors; floating body and body tied transistors. It is shown that the floating body transistor is the best candidate for the design of RF antenna switches implemented in a fully integrated RF communication system. Outstanding high temperature behavior is also emphasized on a temperature range from 25 degrees C to.
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Emam, M., El Kaamouchi, M., Si Moussa, M., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2007). High temperature antenna switches in 130 nm SOI technology. Proccedings 2007 IEEE International SOI Conference, p. 121-122. https://hdl.handle.net/2078.5/230983