Transistor modelling for mm-Wave technology pathfinding
(2021) International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) — Location: Dallas, TX, USA (27.September.2021)
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- Abstract
- A review of the modelling requirements to establish a Design-Technology Co-Optimization loop for mmWave Front-End Modules is presented. The example of GaN/Si technology is detailed, and recent modeling developments are explained.
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Citations
Parvais, B., ElKashlan, R., Yu, H., Sibaja-Hernandez, A., Vermeersch, B., Putcha, V., Cardinael, P., Rodriguez, R., Khaled, A., Alian, A., Peralagu, U., Zhao, M., Yadav, S., Gramegna, G., Van Driessche, J., & Collaert, N. (2021). Transistor modelling for mm-Wave technology pathfinding. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, USA. https://hdl.handle.net/2078.5/223944