Integral Function Method for the Analysis of Harmonic Distortion of SOI MOSFETS
(2004) Belgian Journal of Electronics & Communications — n° 2, p. 9-11 (2004)
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- Abstract
- The Integral Function Method (IFM) has been recently proposed to study the Harmonic Distortion (HD) of devices and systems. In this work, the large signal transfer function of Silicon-on-Insulator (SOI) MOSFET is investigated. From that characteristic, the IFM is applied, showing the impact of the load impedance and both gate and drain controlling voltages on the HD. The frequency validity range of IFM is calculated using the Volterra formalism. The results are validated through Large-Signal Vector Analyser measurements.
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Citations
Parvais, B., & Raskin, J.-P. (2004). Integral Function Method for the Analysis of Harmonic Distortion of SOI MOSFETS. Belgian Journal of Electronics & Communications, 2, 9-11. https://hdl.handle.net/2078.5/211547 (Original work published 2004)