Hybrid gate dielectrics: a comparative study between polyvinyl alcohol/SiO2 nanocomposite and pure polyvinyl alcohol thin-film transistors
(2018) Bulletin of Materials Science — Vol. 42, n° 1, p. 1-9 (2019)
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- Authors
Afsharimani, Nasima S. 
- Abstract
- Polyvinyl alcohol (PVA) thin films as polymer gate dielectrics, with and without SiO2 nanoparticles were fabricated using spin-coating. Surface roughness and hydrophilicity of PVA and PVA/SiO2 thin films were studied by contact-angle measurements and atomic force microscopy. The dielectric properties were characterized via capacitance and leakage-current measurements on metal–insulator–metal structures. In order to further investigate the application potential of such materials as a replacement for conventional inorganic dielectrics such as SiO2 in organic thin-film transistors,devices were fabricated based on these polymers using α, ω-dihexylquaterthiophene as an active layer. Performance of the deviceswas realized by electrical measurements andKelvin probe forcemicroscopy. All transistors showed hole and electron mobilities in the low-voltage range. PVA/SiO2 films showed larger capacitance, less hydrophilicity, rougher surfaces and considerable leakage currents compared with those with neat PVA. Although integrating nanoparticles modified surface electronic properties and showed a shift in surface potential as observed in Kelvin probe force measurements, it appears that non-polymeric and neat polymeric dielectric materials could still be a privilege to nanocomposite polymeric dielectrics for optoelectronic applications.
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Citations
Afsharimani, N. S., & Nysten, B. (2018). Hybrid gate dielectrics: a comparative study between polyvinyl alcohol/SiO2 nanocomposite and pure polyvinyl alcohol thin-film transistors. Bulletin of Materials Science, 42(1), 1-9. https://doi.org/10.1007/s12034-018-1695-y (Original work published 2019)