Characterization and modelling of graded channel single gate and gate-all-around SOI MOSFETs
(2002) Union Radio-Scientifique Internationale (U.R.S.I.) — Location: Brussels, Belgium (13.December.2002)
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Chung, T. M., & Raskin, J.-P. (2002). Characterization and modelling of graded channel single gate and gate-all-around SOI MOSFETs. Proceedings of the Union Radio-Scientifique Internationale (U.R.S.I.), p. 1 page. https://hdl.handle.net/2078.5/229373