SOI Gated Resistor: CMOS without Junctions

Colinge, Jean-Pierre;Lee, Chi-Woo;Afzalian, Aryan;Dehdashti, Nima;Murphy, R.;et.al.
(2009) 2009 IEEE International SOI Conference — Location: Foster City (USA) (4.October.2009)

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Authors
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Dehdashti, NimaTyndall National Institute, University of Cork
    Author
  • Murphy, R.Tyndall National Institute, University of Cork
    Author
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Abstract
We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.
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Colinge, J.-P., Lee, C.-W., Afzalian, A., Dehdashti, N., Yan, R., Ferain, I., Razavi, P., O’Neill, B., Blake, A., White, M., Kelleher, A. M., McCarthy, B., & Murphy, R. (2009). SOI Gated Resistor: CMOS without Junctions. Proceedings of the 2009 IEEE International SOI Conference, 2 pages. https://hdl.handle.net/2078.5/252700