Photocrosslinking of ferroelectric polymers and its application in three-dimensional memory arrays

van Breemen, A. J. J. M.;van der Putten, J. B. P. H.;Cai, Ronggang;Reimann, K.;Gelinck, G. H.;et.al.
(2011) Applied Physics Letters — Vol. 98, n° 18, p. 183302 (2011)

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Authors
  • van Breemen, A. J. J. M.
    Author
  • van der Putten, J. B. P. H.
    Author
  • Cai, RonggangUCLouvain
    Author
  • Reimann, K.
    Author
  • Gelinck, G. H.
    Author
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Abstract
An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1–2 m resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a noncrosslinked film. The negative process is used to stack ferroelectric films on top of each other to make three-dimensional cross-bar arrays of nonvolatile ferroelectric capacitor memories.
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van Breemen, A. J. J. M., van der Putten, J. B. P. H., Cai, R., Reimann, K., Marsman, A. W., Willard, N., de Leeuw, D. M., & Gelinck, G. H. (2011). Photocrosslinking of ferroelectric polymers and its application in three-dimensional memory arrays. Applied Physics Letters, 98(18), 183302. https://doi.org/10.1063/1.3571284 (Original work published 2011)