Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits
(2000) Analog Integrated Circuits and Signal Processing — Vol. 25, n° 2, p. 133-155 (2000)
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- Abstract
- The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static small-signal model and the high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.
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Raskin, J.-P., Gilon, R., Dambrine, G., Chen, J., Vanhoenacker-Janvier, D., & Colinge, JP. (2000). Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits. Analog Integrated Circuits and Signal Processing, 25(2), 133-155. https://doi.org/10.1023/A:1008380615900 (Original work published 2000)