Theory and Computation of Hall Scattering Factor in Graphene

Macheda, Francesco;Poncé, Samuel;Giustino, Feliciano;Bonini, Nicola
(2020) Nano Letters : a journal dedicated to nanoscience and nanotechnology — Vol. 20, n° 12, p. 8861-8865 (2020)

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  • Macheda, Francescoorcid-logoDepartment of Physics, King’s College London, Strand, London WC2R 2LS, United Kingdom
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  • Poncé, Samuelorcid-logoUCLouvain
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  • Giustino, FelicianoOden Institute for Computational Engineering and Sciences and Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
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  • Bonini, NicolaDepartment of Physics, King’s College London, Strand, London WC2R 2LS, United Kingdom
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Abstract
The Hall scattering factor, r, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments, it is usually assumed to be 1. In this paper, we use a combination of analytical and ab initio modeling to determine r in graphene. Although at high carrier densities r ≈ 1 in a wide temperature range, at low doping the temperature dependence of r is very strong with values as high as 4 below 300 K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures, r can instead become as low as 0.5 due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately r in graphene in a wide range of temperatures and carrier densities.
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Macheda, F., Poncé, S., Giustino, F., & Bonini, N. (2020). Theory and Computation of Hall Scattering Factor in Graphene. Nano Letters : a journal dedicated to nanoscience and nanotechnology, 20(12), 8861-8865. https://doi.org/10.1021/acs.nanolett.0c03874 (Original work published 2020)