Zero-temperature-coefficient biasing point of 2.4-GHz LNA in PD SOI CMOS technology
(2007) 2007 European Microwave Integrated Circuits Conference — Location: Munich, Germany (8.October.2007)
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- Abstract
- This paper reviews and analyzes a fully integrated low-noise amplifier (LNA) for low-power and high temperature applications, in 130 nm partially depleted silicon-on-insulator (SOI) CMOS technology. The LNA has been characterized over a temperature range from 25 to 200 degrees C and designed using a cascode inductive source degeneration topology. Thanks to the SOI technology and the choice of the zero-temperature-coefficient (ZTC) bias point, the LNA measurements show a minor degradation of the gain due to the temperature variation for a power consumption of 2.3 mW under 1.2 V supply is applied. The effects of high temperature are observed on the gain of the LNA and on the SOI transistors in order to analyze the behavior of the LNA versus temperature effect.
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El Kaamouchi, M., Si Moussa, M., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2007). Zero-temperature-coefficient biasing point of 2.4-GHz LNA in PD SOI CMOS technology. 2007 European Microwave Integrated Circuits Conference, p. 303-306. https://doi.org/10.1109/EMICC.2007.4412709