Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC
(2005) Philosophical Magazine Letters : structure and properties of condensed matter — Vol. 85, p. 259-267 (2005)
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Université Paul Cézanne Thermodynamique, Propriétés Electriques, Contraintes et Structures aux Echelles Nanométriques ONERA CNRS Laboratoire d'Etudes des Microstructures
Citations
Regula, G., Lancin, M., Idrissi, H., Pichaud, B., & Douin, J. (2005). Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC. Philosophical Magazine Letters : structure and properties of condensed matter, 85, 259-267. https://doi.org/10.1080/09500830500157686 (Original work published 2005)