Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects

et al.;Nguyen, Viet-Hung;et al.
(2013) 2013 Symposium on VLSI Technology — Location: Kyoto, Japan (11.June.2013)

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et al., Nguyen, V.-H., & et al. (2013). Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects. VLSIT2013, T230-T231. https://hdl.handle.net/2078.5/105678 (Original work published 2013)