Fabrication of bendable and narrow bandgap Cu(In,Ga)(S,Se)2 for tandem photovoltaics
(2025) Communications Materials — Vol. 6, n° 1, p. 1-8 (2025)
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- Authors
Hamtaei, Sarallah 
Brammertz, Guy
- Abstract
- Cu(In,Ga)(S,Se)2 absorbers with a bandgap in the near-infrared region are ideal candidates for a bottom cell in multi-junction solar cell architectures. In flexible and lightweight form factors, such devices could help power many applications through integrated solar cells. Here, we show the use of a two-step method to synthesize Cu(In,Ga)(S,Se)2, with a bandgap between 1.00 and 1.13 eV, on bendable ultra-thin glass, with minority carrier lifetimes approaching 100 ns, in a homogenous and repeatable fashion. We also report on conventional and alternative device fabrication methods with very low waste and toxicity footprints. Champion solar cells are fabricated based on absorbers with a graded bandgap between 1.05 and 1.1 eV, and an open circuit voltage approaching 600 mV. Our results show a way for scalable fabrication of all thin-film, flexible tandem solar cells, by means of industrially relevant processing steps in a low cost and sustainable fashion.
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Citations
Hamtaei, S., Debot, A., Scaffidi, R., Brammertz, G., Cariou, E., Garner, S. M., Aguirre, A., Poortmans, J., Dale, P. J., & Vermang, B. (2025). Fabrication of bendable and narrow bandgap Cu(In,Ga)(S,Se)2 for tandem photovoltaics. Communications Materials, 6(1), 1-8. https://doi.org/10.1038/s43246-024-00706-x (Original work published 2025)