High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs
(2009) 39th European Solid-State Device Research Conference. ESSDERC 2009 — Location: Athens, Greece (14.September.2009)
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- Abstract
- In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 mu A/ mu m for n-type devices with As segregation and 427 mu A/ mu m for p-type devices with B segregation, respectively. A detailed high-frequency characterization proves the high performance of the devices with cut-off frequencies f/sub T/ of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of gate length.
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Urban, C., Emam, M., Sandow, C., Zhao, Q.-T., Fox, A., Raskin, J.-P., & Mantl, S. (2009). High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs. In Tsoukalas, D.; Dimoulas, A.; (ed.), 39th European Solid-State Device Research Conference. ESSDERC 2009 (p. p. 149-152). IEEE. https://doi.org/10.1109/ESSDERC.2009.5331620