Analysis of silicides formation for Schottky barrier contacts applications

Katcki, J.;Ratajczak, J.;Laszcz, A.;Czerwinski, A.;Dubois, Emmanuel;et.al.
(2008) 7th Polish-Japanese Joint Seminar on Micro and Nano Analysis 2008 — Location: Warsaw (Poland) (7.September.2008)

Files

No attached file found for this publication.

Details

Authors
  • Katcki, J.Institute of Electron Technology, Warsaw
    Author
  • Ratajczak, J.Institute of Electron Technology, Warsaw
    Author
  • Laszcz, A.Institute of Electron Technology, Warsaw
    Author
  • Czerwinski, A.Institute of Electron Technology, Warsaw
    Author
  • Tang, XiaohuiUCLouvain
    Author
  • Dubois, EmmanuelIEMN/ISEN, Villeneuve d'Ascq/France
    Author
Show more
Abstract
In this paper we present results of transmission electron microscopy observation of the formation processes of platinum, iridium, erbium and ytterbium silicides. The studies were focused on the measurement of silicide layers thickness and the interface roughness as well as the observation of the grain structure in silicide layers. The resuls of TEM analysis have been related to electrical parameters of silicides obtained in viarious annealing conditions.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Katcki, J., Ratajczak, J., Laszcz, A., Czerwinski, A., Tang, X., Larrieu, G., Breil, N., Yarheka, D., & Dubois, E. (2008). Analysis of silicides formation for Schottky barrier contacts applications. 7th Polish-Japanese Joint Seminar on Micro and Nano Analysis 2008, Warsaw (Poland). https://hdl.handle.net/2078.5/230140