Diffusion model for high-temperature off-state current in SOI MOSFETs

Rudenko, Tamara;Kilchytska, Valeriya;Rudenko, A.N.
(1997) Microelectronic Engineering — Vol. 36, n° 1, p. 367-370 (1997)

Files

pdfdocument.pdf
  • Restricted Access
  • Adobe PDF
  • 281.48 KB
Request a copy

Details

Authors
  • Rudenko, TamaraLashkarov Institute of Semiconductor Physics, Kiev
    Author
  • Kilchytska, ValeriyaUCLouvain
    Author
  • Rudenko, A.N.Lashkarov Institute of Semiconductor Physics, Kiev
    Author
Abstract
In this paper off-state drain currents in long-channel inversion mode SOI MOSFETs are investigated in the range 50-320oC by measurements and simulations. The behavior of high-temperature (T>200oC) off-state currents is interpreted in terms of diffusion model, based on the analysis of carrier distribution in a SOI film in off-state of the device. The back-gate biasing and the silicon film thinning effects on high-temperature off-state currents are analyzed.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Rudenko, T., Kilchytska, V., & Rudenko, A. N. (1997). Diffusion model for high-temperature off-state current in SOI MOSFETs. Microelectronic Engineering, 36(1), 367-370. https://doi.org/10.1016/S0167-9317(97)00081-6 (Original work published 1997)