Electron mobility of SnO2 from first principles

Wang, Amanda;Bushick, Kyle;Pant, Nick;Lee, Woncheol;Kioupakis, Emmanouil;et.al.
(2024) Applied Physics Letters — Vol. 124, n° 17, p. 172103 (2024)

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Authors
  • Wang, Amandaorcid-logoDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
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  • Bushick, Kyleorcid-logoDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
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  • Pant, Nickorcid-logoDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
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  • Lee, Woncheolorcid-logoDepartment of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
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  • Poncé, Samuelorcid-logoUCLouvain
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  • Kioupakis, Emmanouilorcid-logoDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
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Abstract
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature and doping concentration dependence and to elucidate the scattering mechanisms that limit transport. We include both electron–phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 1018 cm−3.
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Wang, A., Bushick, K., Pant, N., Lee, W., Zhang, X., Leveillee, J., Giustino, F., Poncé, S., & Kioupakis, E. (2024). Electron mobility of SnO2 from first principles. Applied Physics Letters, 124(17), 172103. https://doi.org/10.1063/5.0198885 (Original work published 2024)