Two-dimensional analysis of the back region of IBC silicon solar cells

Boumaour, M.;Van de Wiele, F.
(1983) NASECODE III. Proceedings of the Third International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits — Location: Galway, Ireland (15.June.1983)

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  • Boumaour, M.
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  • Van de Wiele, F.
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Abstract
A two-dimensional numerical program is performed to analyze the region between the back contact fingers of an IBC silicon solar cell. The model accounts for the interface charges at the Si-SiO/sub 2/ interface. Since 10% of the total current flows in the region just beneath this interface, it is necessary to prevent the minority carriers from being diverted towards this region of interest; it is shown that it is more advantageous to extend the /b n//sup +/ layer up to the collecting junction for an /b n/-type substrate device.
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Boumaour, M., & Van de Wiele, F. (1983). Two-dimensional analysis of the back region of IBC silicon solar cells. In Miller, J.J.H.; (ed.), NASECODE III. Proceedings of the Third International Conference on theNumerical Analysis of Semiconductor Devices and Integrated Circuits (p. p. 96-101). Boole press. https://hdl.handle.net/2078.5/220663