TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

Ratajczak, J.;Laszcz, A.;Czerwinski, A.;Katcki, J.;Dubois, Emmanuel;et.al.
(2009) Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics — Vol. 116, n° 98, p. 89-91 (2009)

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  • Ratajczak, J.Institute of Electron Technology, Warsaw
    Author
  • Laszcz, A.Institute of Electron Technology, Warsaw
    Author
  • Czerwinski, A.Institute of Electron Technology, Warsaw
    Author
  • Katcki, J.Institute of Electron Technology, Warsaw
    Author
  • Tang, XiaohuiUCLouvain
    Author
  • Reckinger, NicolasUCLouvain
    Author
  • Dubois, EmmanuelIEMN/ISEN, Villeneuve d'Ascq
    Author
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Abstract
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
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Ratajczak, J., Laszcz, A., Czerwinski, A., Katcki, J., Tang, X., Reckinger, N., Yarekha, N., Larrieu, G., & Dubois, E. (2009). TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs. Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 116(98), 89-91. https://hdl.handle.net/2078.5/201091 (Original work published 2009)