Hot carrier (HC) and Bias-Temperature-Instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers

Lee, Chi-Woo;Ferain, Isabelle;Afzalian, Aryan;Byun, K.-Y.;Ioannou, D.E.;et.al.
(2009) ESSDERC 2009

Files

C_28HotcarrierHCandBias-Temperature-InstabilityBTI.pdf
  • Restricted Access
  • Adobe PDF
  • 244.25 KB
Request a copy

Details

Authors
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Ferain, IsabelleTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Byun, K.-Y.Tyndall National Institute, University of Cork
    Author
  • Ioannou, D.E.Tyndall National Institute, University of Cork
    Author
Show more
Abstract
The results are reported of an experimental study of the hot carrier (HC) and bias-temperature-instability (BTI) reliability of MuGFETS, fabricated on SOI wafers with silicon oxide and silicon nitride buried layers. N- and P-channel devices of 65 nm long and 42nm or 32nm wide channels were stressed and measured at room temperature and at 125ºC. A complicated picture emerges: HC degradation is dominant in n-MuGFETs whereas both HC and BTI mechanisms are active concurrently in p-MuGFETs under hot carrier stress. When HC degradation dominates, the wider fin devices tend to degrade more than the narrower; the reverse is generally true for BTI degradation.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Lee, C.-W., Ferain, I., Afzalian, A., Byun, K.-Y., Yan, R., Dehdashti, N., Razavi, P., Xiong, W., Colinge, J.-P., Colinge, C. A., & Ioannou, D. E. (2009). Hot carrier (HC) and Bias-Temperature-Instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers. Proceedings of ESSDERC 2009. Published. ESSDERC 2009. https://hdl.handle.net/2078.5/252699