Silo Isolation Technique - a Study of Active and Parasitic Device Characteristics With Semi-recessed and Fully-recessed Field Oxides

Coppee, JL.;Vandewiele, F.
(1988) Solid-State Electronics — Vol. 31, n° 5, p. 887-891 (1988)

Files

pdfdocument.pdf
  • Restricted Access
  • Adobe PDF
  • 1.04 MB

Details

Authors
  • Coppee, JL.
    Author
  • Vandewiele, F.
    Author
Affiliations

Citations

Coppee, JL., & Vandewiele, F. (1988). Silo Isolation Technique - a Study of Active and Parasitic Device Characteristics With Semi-recessed and Fully-recessed Field Oxides. Solid-State Electronics, 31(5), 887-891. https://doi.org/10.1016/0038-1101(88)90042-1 (Original work published 1988)