Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit
(2012) EUROSOI 2011 Thematic Network on Silicon on Insulator Technology Confererence N°7 — Location: Granada (Spain) (17.January.2011)
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- Abstract
- In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150-220 GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250 °C) on analog figures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented.
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Citations
Kilchytska, V., Md Arshad, M. K., Makovejev, S., Olsen, S., Andrieu, F., Poiroux, T., Faynot, O., & Raskin, J.-P. (2012). Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit. Solid-State Electronics, 70, 50-58. https://doi.org/10.1016/j.sse.2011.11.020 (Original work published 2012)