Investigation of high frequency performances for Schottky-Barrier p-MOSFET

Valentin, R.;Dubois, E.;Raskin, Jean-Pierre;Dambrine, G.;Danneville, F.;et.al.
(2007) 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems — Location: Long Beach, CA, U2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF SystemsSA (10.January.2007)

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  • Valentin, R.IEMN, Villeneuve d'Ascq, France
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  • Dubois, E.IEMN, Villeneuve d'Ascq, France
    Author
  • Raskin, Jean-PierreUCLouvain
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  • Dambrine, G.IEMN, Villeneuve d'Ascq, France
    Author
  • Danneville, F.IEMN, Villeneuve d'Ascq, France
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Abstract
Schottky-barrier source/drain (S/D) MOSFETs (SB-MOS) have recently demonstrated leading edge high frequency (HF) performance, featuring a 280 GHz current gain cut-off frequency fT at 30 nm of gate length. Although this figure represents the best ever recorded fT for a p-MOSFET, little effort has been produced, so far, to analyze key small signal elements (SSE) such as the transconductance G m and the total input capacitance Cgg that directly impact fT. This work demonstrates that the loss of transconductance related to the Schottky barrier (SB) is counterbalanced by a reduction of the total gate capacitance.
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Valentin, R., Dubois, E., Raskin, J.-P., Dambrine, G., Larrieu, G., Breil, N., & Danneville, F. (2007). Investigation of high frequency performances for Schottky-Barrier p-MOSFET. Proceedings of the 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 32-35. https://doi.org/10.1109/SMIC.2007.322762