Charge transport in chemically doped 2D graphene
(2008) Physical Review Letters — Vol. 101, n° 3, p. 036808 (4pages) (2008)
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- Abstract
- We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using abinitio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the resulting charge mobilities and conductivities of systems with impurity concentration ranging within [0.5, 4.0]%. Even for a doping concentration as large as 4.0%, the conduction is marginally affected by quantum interference effects, preserving therefore remarkable transport properties, even down to the zero temperature limit. As a result of the chemical doping, electron-hole mobilities and conductivities are shown to become asymmetric with respect to the Dirac point. © 2008 The American Physical Society.
- Affiliations
CEA Institute for Nanosciences and Cryogenics
Citations
Lherbier, A., Blase, X., Niquet, Y.-M., Triozon, F., & Roche, S. (2008). Charge transport in chemically doped 2D graphene. Physical Review Letters, 101(3), 036808 (4pages). https://doi.org/10.1103/PhysRevLett.101.036808 (Original work published 2008)