Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering
(2011) Acta Materialia — Vol. 59, n° 20, p. 7521-7529 (2011)
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- ZnO and fluorine doped ZnO (FZO) thin films were prepared by d.c. reactive magnetron sputtering using a zinc target in an Ar/O<inf>2</inf>(/F<inf>2</inf>) mixture. In a first attempt ZnO films were synthesized in order to optimize the matrix properties in terms of crystalline properties and transparency. The parameters studied were the d.c. power (P<inf>dc</inf>), the total pressure (P<inf>Tot</inf>) and the O<inf>2</inf> content in the discharge (%O <inf>2</inf>). The highest grain size of ∼25 nm is obtained for P <inf>dc</inf> = 70 W, P<inf>Tot</inf> = 30 mtorr and %O<inf>2</inf> = 7.5%. F<inf>2</inf> was then introduced in the discharge. The influence of the presence of fluorine on the crystallographic, chemical, electrical and optical properties of the deposited films were evaluated. Our X-ray photoelectron spectroscopy and X-ray diffraction (XRD) data suggest that only a certain part of the measured fluorine atoms substitute for oxygen atoms in the ZnO structure. The rest of fluorine could be adsorbed as F<inf>2</inf> on the grain boundaries or located in interstices of the ZnO structure. XRD data reveal a decrease in the crystallite size with an increase in the fluorine content. Above a fluorine concentration of ∼2% the FZO films become amorphous. The electrical properties have been investigated by Hall effect measurements. The optimal synthesis conditions (∼2% of fluorine in the film) were a charge carrier density of ∼10<sup>20</sup> cm<sup>-3</sup>, an electrical resistivity of 10<sup>-2</sup> Ω cm, and a charge mobility of 4 cm<sup>2</sup> V s <sup>-1</sup>. Finally, all deposited FZO films had >80% transmission in the visible range. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Noirfalise, X., Godfroid, T., Guisbiers, G., & Snyders, R. (2011). Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering. Acta Materialia, 59(20), 7521-7529. https://doi.org/10.1016/j.actamat.2011.07.068 (Original work published 2011)