Junctionless MuGFETS

Lee, Chi-Woo;Afzalian, Aryan;Yan, Ran;Dehdashti, Nima;Colinge, Jean-Pierre
(2009) 5th EuroSOI Workshop 2009 — Location: Göteborg (Sweden) (19.January.2009)

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Authors
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Dehdashti, NimaTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
Abstract
This paper describes the simulation of the electrical characteristics of a new transistor concept called “Junctionless MuGFET”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical property than classical inversion-mode devices with S&D PN junctions.
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Lee, C.-W., Afzalian, A., Yan, R., Dehdashti, N., & Colinge, J.-P. (2009). Junctionless MuGFETS. Proceedings of the 5th EuroSOI Workshop 2009, p. 2 pages. https://hdl.handle.net/2078.5/252507