Electrical and thermal transport properties of arsenic
Heremans, J.;Issi, J.-P.;Rashid, A.A.M.;Saunders, G.A.
(1977) Journal of Physics C: Solid State Physics — Vol. 10, n° 22, p. 4511-4522 (1977)
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Authors
Heremans, J.
Author
Issi, J.-P.
Author
Rashid, A.A.M.
Author
Saunders, G.A.
Author
Abstract
Measurements of the electrical and thermal conductivity and the thermoelectric power have been made in the binary direction of arsenic between 2K and 300K. Below 30K the ideal electrical resistivity shows a /b T//sup 3/ behaviour. The thermal conductivity has been tentatively separated into electronic and lattice contributions by means of the Wiedemann-Franz law. The lattice thermal conductivity shows a maximum at 30K and is attributed above this temperature to phonon-phonon Umklapp processes and below this temperature to phonon-electron interactions. The thermoelectric power, which also shows a maximum at 30K, evidences a marked phonon-drag effect in arsenic.
Heremans, J., Issi, J.-P., Rashid, A. A. M., & Saunders, G. A. (1977). Electrical and thermal transport properties of arsenic. Journal of Physics C: Solid State Physics, 10(22), 4511-4522. https://doi.org/10.1088/0022-3719/10/22/020 (Original work published 1977)