Low‐Field Memristive Switching in Epitaxially Strained SnS Thin Film
(2025) Advanced Functional Materials — Vol. 36, n° 28 (2025)
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- Authors
Rohde, Michael 
Razeghi, Mohammadali Spiece, Jean He, Gaohang Gehring, Pascal
- Abstract
- The quasi van der Waals (vdW) polarizable semiconductor, tin monosulfide (SnS), holds exceptional potential as a memristor in neu-romorphic architectures as well as for sustainable, mechanically flexible and biocompatible photovoltaic and piezoelectric applications. So far, the synthesis of SnS remained limited to flake scale growth or subject to a compromise between substrate interaction and crystal order. In this work, we overcome this limitation by introducing a substrate pre-treatment with reactive sulfur to a hybrid chemical/physical growth method. Our approach achieves the sharply interfaced growth of a textured epitaxial SnS thin film directly on α-Al2O3 introducing in-plane strain and centrosymmetry breaking. These films possess stable and programmable mem-ristive switching behaviour with a switching field of 360 V/cm, orders of magnitude lower than in previous studies on SnS. We thus demonstrate the interplay of epitaxially induced strain and symmetry breaking in SnS, paving the way for its thin film scale integration in the next generation of energy efficient and material-level adaptive electronics.
- Affiliations
Citations
Rohde, M., Razeghi, M., Spiece, J., He, G., Canetta, A., Fonck, V., Molina‐lopez, F., Merckling, C., & Gehring, P. (2025). Low‐Field Memristive Switching in Epitaxially Strained SnS Thin Film. Advanced Functional Materials, 36(28). https://doi.org/10.1002/adfm.202508196 (Original work published 2025)