An SOI single-electron transistor
(1999) IEEE International SOI Conference — Location: Rohnert Park, CA (USA) (4.October.1999)
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- Abstract
- Single-electron transistors (SETs) are currently being investigated by many research groups as possible devices for ultra-high-density, low-power information processing or storage systems. A single-electron transistor consists of two tunnel junctions (TJ) connected to the source and the drain, a center floating node and a capacitance connected to the device gate. It takes a finite minimum source-to center node bias to inject an electron into the node by tunneling. This effect is called Coulomb blockade. In this paper, SET devices were fabricated using thin-silicon (100 nm) Unibond(R) wafers and e-beam lithography, and were found to exhibit the Coulomb blockade effects predicted by theory
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Citations
Tang, X., Baie, X., Bayot, V., Van de Wiele, F., & Colinge, J.-P. (1999). An SOI single-electron transistor. Proceedings of the IEEE International SOI Conference 1999, p. 46-47. https://doi.org/10.1109/SOI.1999.819851