Back-gate bias effect on the linearity of pocket doped FDSOI MOSFETShaik, Rameez Raja;Chandrasekar, L.;Raskin, Jean-Pierre;Pradhan, K.P.(2022) Microelectronics — Vol. 121, p. 105365 (2022)
FilesBack-gatebiaseffectonthelinearityofpocketdopedFDSOIMOSFET.pdf Open Access Adobe PDF1.48 MBDownloadDetailsAuthorsShaik, Rameez RajaAuthorChandrasekar, L.AuthorRaskin, Jean-PierreUCLouvainAuthorPradhan, K.P.AuthorAffiliationsUCLouvainSST/ICTM/ELEN - Pôle en ingénierie électriqueShow moreCitations APA Chicago FWB Shaik, R. R., Chandrasekar, L., Raskin, J.-P., & Pradhan, K. P. (2022). Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. Microelectronics, 121, 105365. https://doi.org/10.1016/j.mejo.2022.105365 (Original work published 2022)