High temperature RF behavior of SOI MOSFET transistors for Low Power Low Voltage applications
(2010) 2010 IEEE International SOI Conference — Location: San Diego, CA, USA (11.October.2010)
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- Abstract
- This paper presents a new approach to optimize the RF performance at high temperatures for low power low voltage applications. It is shown that the correct choice of the bias point can result in an improvement of the RF behavior of SOI transistors with increasing the temperature, which is opposite to the traditional degradation of RF behavior with increasing temperature. This approach is confirmed by RF measurements for both floating-body and body-tied SOI MOSFET transistors.
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Citations
Emam, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2010). High temperature RF behavior of SOI MOSFET transistors for Low Power Low Voltage applications. Proceedings of the 2010 IEEE International SOI Conference, pp. 147-148. https://hdl.handle.net/2078.5/230789