High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors

Emam, Mostafa;Tinoco, J.;Vanhoenacker-Janvier, Danielle;Raskin, Jean-Pierre
(2008) EUROSOI - 2008, Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits — Location: Tyndall National Institute, Cork, Ireland (23.January.2008)

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Abstract
This work presents the high-temperature DC and RFbehaviorsofpartially-depletedSOI MOSFETs. DC and RF figures of merit are deeply investigated, both analytically and experimentally, to provide a complete study ofhigh-temperature performance and a comparison between floating-body and body-tied transistors. A highly stable RF performance is noticed especially for cutoff frequency and intrinsic elements for temperature as high as 250° C.
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Emam, M., Tinoco, J., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2008). High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors. Solid-State Electronics, 52(12), 1924-1932. https://doi.org/10.1016/j.sse.2008.06.058 (Original work published 2008)