High-throughput identification of spin-photon interfaces in silicon
(2023) Science advances — Vol. 9, n° 40, p. 1-13 (2023)
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- Color centers in host semiconductors are prime candidates as spin-photon interfaces for quantum applications. Finding an optimal spin-photon interface in silicon would move quantum information technologies toward a mature semiconducting host. However, the space of possible charged defects is vast, making the identification of candidates from experiments alone extremely challenging. Here, we use high-throughput first-principles computational screening to identify spin-photon interfaces among more than 1000 charged defects in silicon. The use of a single-shot hybrid functional approach is critical in enabling the screening of many quantum defects with a reasonable accuracy. We identify three promising spin-photon interfaces as potential bright emitters in the telecom band: [see pdf]. These candidates are excited through defect-bound excitons, stressing the importance of such defects in silicon for telecom band operations. Our work paves the way to further large-scale computational screening for quantum defects in semiconductors.
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Xiong, Y., Bourgois, C., Sheremetyeva, N., Chen, W., Dahliah, D., Song, H., Zheng, J., Griffin, S. M., Sipahigil, A., & Hautier, G. (2023). High-throughput identification of spin-photon interfaces in silicon. Science advances, 9(40), 1-13. https://doi.org/10.1126/sciadv.adh8617 (Original work published 2023)