Microscopic analysis of high-frequency noise behaviour of Fully-Depleted Silicon-on-Insulator MOSFETs

Rengel, R.;Mateos, José;Pardo, D.;Gonzalez, T.;Raskin, Jean-Pierre;et.al.
(2003) 17th International Conference on Noise and Fluctuations – ICNF 2003 — Location: Prague, Czech Republic (18.August.2003)

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  • Rengel, R.IEMN, Villeneuve d'Ascq, France
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  • Mateos, JoséIEMN, Villeneuve d'Ascq, France
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  • Pardo, D.IEMN, Villeneuve d'Ascq, France
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  • Gonzalez, T.IEMN, Villeneuve d'Ascq, France
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  • Raskin, Jean-PierreUCLouvain
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Rengel, R., Mateos, J., Pardo, D., Gonzalez, T., Martin, M. J., Dambrine, G., Danneville, F., & Raskin, J.-P. (2003). Microscopic analysis of high-frequency noise behaviour of Fully-Depleted Silicon-on-Insulator MOSFETs. Proceedings of the 17th International Conference on Noise and Fluctuations, ICNF 2003, pp. 585-588. https://hdl.handle.net/2078.5/229549