Evidence for resonant energy transfer in terbiumdoped (Al,In)N films
(2010) IOP Conference Series: Materials Science and Engineering — Vol. 15, n° np, p. 7 p. (2010)
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- Measurements of the characteristic luminescence green line family of Tb^{3+} embedded in magnetron sputtered and annealed Al_xIn_{1-x}N films (0\leq x |eq 1) indicate an intensity maximum at around the composition x_{Al}=0.7 (band gap energy 4.1 eV). The results are described by resonant excitation via excitons bound to the Tb atoms starting from the RESI model (Lozykowski and Jadwisienczak, phys. stat. sol. (b) 244 (2007) 2109).
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Gehring, P., Weng, Y., Wu, Z., & Strunk, H. P. (2010). Evidence for resonant energy transfer in terbiumdoped (Al,In)N films. IOP Conference Series: Materials Science and Engineering, 15(np), 7 p. https://doi.org/10.1088/1757-899X/15/1/012007 (Original work published 2010)