Superconductivity in doped sp(3) semiconductors: The case of the clathrates
(2003) Physical Review Letters — Vol. 91, n° 24, p. 247001 (2003)
Files
A18.pdf
Restricted Access - Adobe PDF
- 365.57 KB
Details
- Authors
- Abstract
- We present a joint experimental and theoretical study of the superconductivity in doped silicon clathrates. The critical temperature in Ba-8@Si-46 is shown to strongly decrease with applied pressure. These results are corroborated by ab initio calculations using MacMillan's formulation of the BCS theory with the electron-phonon coupling constant lambda calculated from perturbative density functional theory. Further, the study of I-8@Si-46 and of gedanken pure silicon diamond and clathrate phases doped within a rigid-band approach show that the superconductivity is an intrinsic property of the sp(3) silicon network. As a consequence, carbon clathrates are predicted to yield large critical temperatures with an effective electron-phonon interaction much larger than in C-60.
- Affiliations
Citations
Connetable, D., Timoshevskii, V., Masenelli, B., Beille, J., Marcus, J., Barbara, B., Saitta, A., Rignanese, G.-M., Melinon, P., Yamanaka, S., & Blase, X. (2003). Superconductivity in doped sp(3) semiconductors: The case of the clathrates. Physical Review Letters, 91(24), 247001. https://doi.org/10.1103/PhysRevLett.91.247001 (Original work published 2003)