High-responsivity broadband photodetection of an ultra-thin In<sub>2</sub>S<sub>3</sub>/CIGS heterojunction on steel

Xi Zeng; Jackson Lontchi; Maria Zhukova; Lionel Fourdrinier; Israr Qadir; Yi Ren; Esko Niemi; Guoli Li; Denis Flandre

doi:10.1364/OL.423999

High-responsivity broadband photodetection of an ultra-thin In₂S₃/CIGS heterojunction on steel

Xi Zeng, Jackson Lontchi, Maria Zhukova, Lionel Fourdrinier, Israr Qadir, Yi Ren, Esko Niemi, Guoli Li, and Denis Flandre

Optics Letters
Vol. 46,
Issue 10,
pp. 2288-2291
(2021)
•https://doi.org/10.1364/OL.423999

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Xi Zeng, Jackson Lontchi, Maria Zhukova, Lionel Fourdrinier, Israr Qadir, Yi Ren, Esko Niemi, Guoli Li, and Denis Flandre, "High-responsivity broadband photodetection of an ultra-thin In₂S₃/CIGS heterojunction on steel," Opt. Lett. 46, 2288-2291 (2021)

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Abstract

${\rm{Cu}}({\rm{In}},{\rm{Ga}}){\rm{S}}{{\rm{e}}_2}$ (CIGS) is a promising light harvesting material for large-area broadband photodetection, but it has been rarely studied up to now. Here an In₂S₃/CIGS heterojunction photodiode on steel is shown to be highly broadband photo-sensitive, with a photoresponsivity over 0.8 A/W, an external quantum efficiency over 100%, and a detectivity over 8×10¹⁰ Jones from 505 to 910nm under a reverse bias of 1 V. Moreover, the CIGS photodiode exhibits an outstanding weak light detection ability (i.e., at light power density of ${{20}}\;\unicode{x00B5} {\rm{W/c}}{{\rm{m}}^2}$ ), reaching a record responsivity of 2.06 A/W, an impressive EQE of 293%, and a good detectivity of ${2.3} \times {{1}}{{{0}}^{11}}$ Jones at 870 nm under 1 V reverse bias. Importantly, the CIGS photodiode, working as a self-powered photodetector, under 0 V, shows a record detectivity of ${\sim}{3.4} \times {{1}}{{{0}}^{12}}$ Jones with a high responsivity of ${\sim}{0.44}\;{\rm{A/W}}$ and a high EQE of ${\sim}{{63}}\%$ , at 870 nm.

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Supplementary Material (1)

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» Supplement 1	Fabrication, characterization methods and photoelectrical performances at 680nm

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Structure	Measured Conditions	R A/W	EQE	D Jones	Reference
$C d S / A l_{2} O_{3} / C I G S$ $C d S / A l_{2} O_{3} / C I G S$	$λ = 800 n m$ $λ = 800 n m$ ( $V_{r} = 0 V$ $V_{r} = 0 V$ )	0.54	$\sim 90 %$ $\sim 90 %$	$1.84 \times 1 0^{12}$ $1.84 \times 1 0^{12}$	[8]
Flexible CdS/CIGS	$λ = 808 n m$ $λ = 808 n m$ ( $V_{r} = 2 V$ $V_{r} = 2 V$ )	1.18	/	$6.65 \times 1 0^{10}$ $6.65 \times 1 0^{10}$	[9]
CdS/K-doped CIGS	$λ = 980 n m$ $λ = 980 n m$ ( $V_{r} = 0.4 V)$ $V_{r} = 0.4 V)$	1.87	237%	$6.45 \times 1 0^{10}$ $6.45 \times 1 0^{10}$	[12]
$I n_{2} S_{3} / C I G S$ $I n_{2} S_{3} / C I G S$	$λ = 870 n m$ $λ = 870 n m$ ( $V_{r} = 1 V$ $V_{r} = 1 V$ )	2.06	293%	$2.3 \times 1 0^{11}$ $2.3 \times 1 0^{11}$	This Letter
$I n_{2} S_{3} / C I G S$ $I n_{2} S_{3} / C I G S$	$λ = 870 n m$ $λ = 870 n m$ ( $V_{r} = 0 V$ $V_{r} = 0 V$ )	$\sim 0.44$ $\sim 0.44$	$\sim 63 %$ $\sim 63 %$	$\sim 3.4 \times 1 0^{12}$ $\sim 3.4 \times 1 0^{12}$	This Letter

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